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IXDN430 / IXDI430 / IXDD430 / IXDS430
Absolute Maximum Ratings (Note 1)
Operating Ratings
Parameter
Supply Voltage
Value
40 V
P a ra m e te r
M a xim um Junction T em perature
V a lu e
150 o C
-55 o C to 125 o C
0.95 o C /W
62.5 o C /W
All Other Pins
Power Dissipation, T AMBIENT ≤ 25 oC
TO220 (CI), TO263 (YI)
Derating Factors (to Ambient)
TO220 (CI), TO263 (YI)
Storage Temperature
Lead Temperature (10 sec)
-0.3 V to VCC + 0.3 V
2W
0.016W/oC
-65 oC to 150 oC
300 oC
O pera ting T em perature R ange
T herm al Im pedance T O 220 (C I), TO 263 (Y I)
θ JC (Ju nction T o C ase)
θ JA (Ju nction T o A m bien t)
T herm al Im pedance 28 pin S O IC w ith H eat S lug (S I)
θ JC (Ju nction T o C ase) 3 o C /W
Electrical Characteristics
Unless otherwise noted, T A = 25 o C, 8.5V ≤ V CC ≤ 35V .
All voltage measurements with respect to GND. IXDD430 configured as described in Test Conditions .
S ym b o l
P a r a m e te r
T e s t C o n d itio n s
M in
T yp
M ax
U n its
V IH
V IL
H ig h in p u t v o lta g e
L o w in p u t v o lta g e
0 V ≤ V IN ≤ V C C , 8 .5 V ≤ V IN ≤ 1 8 V
0 V ≤ V IN ≤ V C C , 8 .5 V ≤ V IN ≤ 1 8 V
3 .5
0 .8
V
V
V IN
In p u t v o lta g e r a n g e
-5
V C C + 0 .3
V
I IN
In p u t c u rre n t
0 V ≤ V IN ≤ V C C
-1 0
10
μ A
V OH
V OL
H ig h o u tp u t v o lta g e
L o w o u tp u t v o lta g e
V C C - 0 .0 2 5
0 .0 2 5
V
V
R OH
O u tp u t re s is ta n c e
V CC = 18V
0 .3
0 .4
?
@ O u tp u t h ig h
R OL
O u tp u t re s is ta n c e
V CC = 18V
0 .2
0 .3
?
@ O u tp u t L o w
I P E A K
I D C
P e a k o u tp u t c u rre n t
C o n tin u o u s o u tp u t
V CC = 18V
L im ite d b y p a c k a g e p o w e r
30
8
A
A
c u rre n t
d is s ip a tio n
V EN
E n a b le v o lta g e ra n g e
IX D D 4 3 0 O n ly
- 0 .3
V c c + 0 .3
V
V ENH
V ENL
R EN
H ig h E n In p u t V o lta g e
L o w E n In p u t V o lta g e
E N In p u t R e s is ta n c e
IX D D 4 3 0 O n ly
IX D D 4 3 0 O n ly
IX D S 4 3 0 O n ly
2 /3 V c c
400
1 /3 V c c
V
V
K ohm
V IN V
IN V V o lta g e R a n g e
IX D S 4 3 0 O n ly
- 0 .3
V c c + 0 .3
V
V IN V H
V IN V L
R IN V
H ig h IN V In p u t V o lta g e
L o w IN V In p u t V o lta g e
IN V In p u t R e s is ta n c e
IX D S 4 3 0 O n ly
IX D S 4 3 0 O n ly
IX D S 4 3 0 O n ly
2 /3 V c c
400
1 /3 V c c
V
V
K ohm
t R
t F
t O N D L Y
R is e tim e
F a ll tim e
O n -tim e p ro p a g a tio n
C L = 5 6 0 0 p F V c c = 1 8 V
C L = 5 6 0 0 p F V c c = 1 8 V
C L = 5 6 0 0 p F V c c = 1 8 V
18
16
41
20
18
45
ns
ns
ns
d e la y
t O FF D L Y
O ff-tim e p ro p a g a tio n
C L = 5 6 0 0 p F V c c = 1 8 V
35
39
ns
d e la y
t E N O H
E n a b le to o u tp u t h ig h
IX D D 4 3 0 O n ly , V c c = 1 8 V
47
ns
d e la y tim e
t D O L D
D is a b le to o u tp u t lo w
IX D D 4 3 0 O n ly , V c c = 1 8 V
120
ns
d e la y tim e
V CC
I C C
P o w e r s u p p ly v o lta g e
P o w e r s u p p ly c u rre n t
V IN = 3 .5 V
V IN = 0 V
8 .5
18
1
0
35
3
10
V
mA
μ A
V IN = + V C C
10
μ A
U VLO
IX D _ 4 3 0 M ; IX D S 4 3 0 :
IX D _ 4 3 0 ; IX D S 4 3 0 :
U V S E L = V C C (M O S F E T )
U V S E L = O P E N (IG B T )
7 .5
1 0 .5
8 .5
1 1 .7 5
9 .5
1 3 .0
V
V
Specifications Subject To Change Without Notice
Note 1: Operating the device beyond parameters with listed “absolute maximum ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
3
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